GaN FETs for microwave and high-temperature applications

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 177-180

  Binari, Steven C ^a   Doverspike, K ^a,b   Kelner, G ^a   Dietrich, H B ^a   Wickenden, A E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

HETERO FIELD EFFECT TRANSISTORS (HFET); PINCH OFF CHARACTERISTICS;

MESFET DEVICES;

EID: 0031079176     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00161-x     Document Type: Article

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