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Volumn 9, Issue 2, 2008, Pages 180-183

Growth and structural properties of β-Ga2O3 thin films on GaN substrates by an oxygen plasma treatment

Author keywords

Ga2O3 thin film; GaN substrate; Oxidation; Plasma treatment

Indexed keywords


EID: 44649152820     PISSN: 12299162     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (7)

References (10)
  • 6
    • 0035269474 scopus 로고    scopus 로고
    • Thermally oxidized GaN film for use as gate insulators
    • H. Kim, S.-J. Park, H. Hwang, "Thermally oxidized GaN film for use as gate insulators", J. Vac. Sci. Technol. B 19, (2001) 579-581.
    • (2001) J. Vac. Sci. Technol. B , vol.19 , pp. 579-581
    • Kim, H.1    Park, S.-J.2    Hwang, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.