GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method

IEEE Electron Device Letters

Volumn 24, Issue 2, 2003, Pages 54-56

  Lee, Ching Ting ^a   Lee, Hsin Ying ^a   Chen, Hong Wei ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

MOS devices; n type GaN; Photoelectrochemical (PEC) oxidation

Indexed keywords

ANNEALING; ELECTROCHEMISTRY; FABRICATION; GALLIUM NITRIDE; LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTOR GROWTH; SILICA;

PHOTOELECTROCHEMICAL OXIDATION;

MOS DEVICES;

EID: 0037718416     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807711     Document Type: Article

References (8)

1. V. Hoel, Y. Guhel, B. Boudart, C. Gaquiere, J. C. de Jaeger, H. Lahreche, and P. Gibart, "Static measurements of GaN MESFETs on (111) Si substrates," Electron Lett., vol. 37, pp. 1095-1096, 2001.
2. G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. McDermott, "High-power 10-GHz operation of AlGaN HFETs on insulating SiC," IEEE Electron Device Lett., vol. 19, pp. 198-200, June 1998.
3. P. Javorka, A. Alam, M. Wolter, A. Fox, M. Marso, M. Heuken, H. Lüth, and P. Kordoš, "AlGaN-GaN HEMTs on (111) silicon substrates," IEEE Electron Device Lett., vol. 23, pp. 4-6, Jan. 2002.
4. J. Burm, K. Chu, W. J. Schaff, L. F. Eastman, M. A. Khan, Q. Chen, J. W. Yang, and M. S. Shur, "0.12-μm gate III-V nitride HFETs with high contact resistances," IEEE Electron Device Lett., vol. 18, pp. 141-143, Apr. 1997.
5. T. Rotter, D. Mistole, J. Stemmer, F. Fedler, J. Aderhold, J. Graul, V. Schwegler, C. Kirchner, M. Kamp, and M. Heuken, "Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions," Appl. Phys. Lett., vol. 76, pp. 3923-3925, 2000.
6. C. T. Lee and H. W. Kao, "Long-term thermal stability of Ti/Al/Pt/Au ohmic contacts to n-type GaN," Appl. Phys. Lett., vol. 76, pp. 2364-2366, 2000.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
8. J. Tan, K.Das, J. A.Cooper, Jr., and M. R.Melloch,"Metal-oxide-semi-conductor capacitors formed by oxidation of polycrystalline silicon on SiC," Appl. Phys. Lett., vol. 70, pp. 2280-2281, 1997.