Studies of metal-ferroelectric-GaN structures

Applied Physics Letters

Volumn 75, Issue 16, 1999, Pages 2416-2417

  Li, W P ^a   Zhang, R ^a   Zhou, Y G ^a   Yin, J ^a   Bu, H M ^a   Luo, Z Y ^a   Shen, B ^a   Shi, Y ^a   Jiang, R L ^a   Gu, S L ^a   Liu, Z G ^a   Zheng, Y D ^a   Huang, Z C ^b  

^a NANJING UNIVERSITY   (China)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001275470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125032     Document Type: Article

References (12)

1. H. C. Casey, Jr., G. Gfoutain, R. G. Alley, B. P. Keller, and S. P. Den-Barrs, Appl. Phys. Lett. 68, 1850 (1996).
2. S. Arulkmaran, T. Jimbo, H. Ishikawa, S. Arulkumaran, and T. Egawa, Appl. Phys. Lett. 73, 809 (1998).
3. F. Ren, M. Hong, S. N. G. Chu, M. A. Marcus, M. J. Schurman, and A. Baca, Appl. Phys. Lett. 73, 3893 (1998).
4. T. A. Rost, H. Lin, and T. A. Rabson, Appl. Phys. Lett. 59, 3654 (1991).
5. M. Alexe, Appl. Phys. Lett. 72, 2283 (1998).
6. J. Senzaki, K. Kurihara, N. Namura, O. Mitsunaga, Y. Iwasaki, and T. Ueno, Jpn. J. Appl. Phys., Part 1 37, 5150 (1998).
7. Y. Morimoto, J. Electrochem. Soc. 121, 1381 (1974).
8. B. Shen, Y. G. Zhou, P. Chen, Z. Z. Chen, L. Zang, R. Zhang, Y. Shi, and Y. D. Zheng, Appl. Phys. A: Solids Surf. 68, 593 (1999).
9. Y. G. Zhou, B. Shen, Z. Z. Chen, P. Chen, R. Zhang, Y. Shi and Y. D. Zheng, Chin. J. Semicond. 20, 147 (1999).
10. S. Matthew, R. Ramesh, T. Venkatesan, and J. Benedetto, Science 276, 238 (1997).
11. J. Lee and C. H. Choi, Appl. Phys. Lett. 72, 3380 (1998).
12. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).