Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 239-242

  Gila, B P ^a   Johnson, J W ^a   Mehandru, R ^a   Luo, B ^a   Onstine, A H ^a   Allums, K K ^a   Krishnamoorthy, V ^b   Bates, S ^a   Abernathy, C R ^a   Ren, F ^a   Pearton, S J ^a  

^a University of Florida   (United States)

^b Uniroyal   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000168584     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<239::AID-PSSA239>3.0.CO;2-D     Document Type: Article

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