GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2084-2086

  Chang, Y H ^a   Chiu, H C ^a   Chang, W H ^a   Kwo, J ^a   Tsai, C C ^b   Hong, J M ^b   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b HUGA Optotech Inc   (Taiwan)

Author keywords

A3. Atomic layer deposition (ALD); A3. Molecular beam epitaxy (MBE); B1. Al2O3; B1. GaN; B2. High dielectrics

Indexed keywords

ALUMINUM; ATOMS; CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROCHLORIC ACID; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; X RAY PHOTOELECTRON SPECTROSCOPY;

A3. ATOMIC LAYER DEPOSITION (ALD); A3. MOLECULAR BEAM EPITAXY (MBE); ATOMIC LAYERS; ATOMIC-LAYER-DEPOSITED; B1. AL2O3; B1. GAN; C-V CURVES; CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; IN-SITU; INTERFACIAL CHEMICALS; METAL-OXIDE SEMICONDUCTOR DIODES; TWO TEMPERATURES; XPS ANALYSIS;

ATOMIC LAYER DEPOSITION;

EID: 63349089776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.011     Document Type: Article

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