Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 2111-2115

  Lin, L M ^a   Luo, Yi ^a   Lai, P T ^a   Lau, Kei May ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Electrical measurements and properties; Gallium nitride; Interface states; Oxidation

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; MOS CAPACITORS; OXIDATION; THERMODYNAMIC STABILITY;

ANNEALING TEMPERATURES; INTERFACE QUALITY; INTERFACE STATES; OXIDATION TEMPERATURE;

FILM GROWTH;

EID: 33750820446     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.036     Document Type: Article

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