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Volumn 76, Issue 26, 2000, Pages 3923-3925

Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000703437     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126822     Document Type: Article
Times cited : (99)

References (25)
  • 19
    • 85037521376 scopus 로고    scopus 로고
    • note
    • The electrolyte is an aqueous solution of 0.1 m KOH/0.1 m EDTA (ethylenedeniamine tetraacetic acid) I:I. It should be noted that for this kind of experiment typical diffusion controlled conditions have been omitted, and that the level of the photocurrent is far below diffusion limitation. The associated low etch rate is therefore due to passivation of the GaN surface.
  • 21
    • 85037510010 scopus 로고    scopus 로고
    • note
    • "Oxide free" status does not mean that oxygen or (native) oxide coverage can be excluded for this case. It was obtained when the oxide was able to dissolve in situ in the dark after the photoassisted processing.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.