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85037521376
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note
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The electrolyte is an aqueous solution of 0.1 m KOH/0.1 m EDTA (ethylenedeniamine tetraacetic acid) I:I. It should be noted that for this kind of experiment typical diffusion controlled conditions have been omitted, and that the level of the photocurrent is far below diffusion limitation. The associated low etch rate is therefore due to passivation of the GaN surface.
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0001917028
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21
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85037510010
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note
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"Oxide free" status does not mean that oxygen or (native) oxide coverage can be excluded for this case. It was obtained when the oxide was able to dissolve in situ in the dark after the photoassisted processing.
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0003834545
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Elsevier Science, Amsterdam, Chap. 8
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P. H. L. Notten, J. E. A. M. van den Meerakker, and J. J. Kelly, Etching of III-V Semiconductors: An Electrochemical Approach (Elsevier Science, Amsterdam, 1991), Chap. 8.
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