Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1679-1682

  Lay, T S ^a   Hong, M ^b   Kwo, J ^b   Mannaerts, J P ^b   Hung, W H ^c   Huang, D J ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b AGERE SYSTEMS   (United States)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

Energy band offset; Ga2O3(Gd2O3); GaAs; GaN

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); MOS DEVICES; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

FOWLER-NORDHEIM (FM) TUNNELING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035449019     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00175-7     Document Type: Article

References (13)