Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Solid-State Electronics

Volumn 52, Issue 5, 2008, Pages 756-764

  Zhou, Yi ^a   Ahyi, Claude ^a   Isaacs Smith, Tamara ^a   Bozack, Michael ^a   Tin, Chin Che ^a   Williams, John ^a   Park, Minseo ^a   Cheng, An jen ^b   Park, Jung Hyun ^b   Kim, Dong Joo ^b   Wang, Dake ^c   Preble, Edward A ^d   Hanser, Andrew ^d   Evans, Keith ^d  

^a AUBURN UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c FURMAN UNIVERSITY   (United States)

^d KYMA TECHNOLOGIES INC   (United States)

Author keywords

Free standing substrate; GaN; Interface trap density; MOS; Reactive ion etching; Thermal oxidation; Wet chemical etching

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM NITRIDE; GROWTH KINETICS; REACTIVE ION ETCHING;

FREE STANDING SUBSTRATE; INTERFACE TRAP DENSITY;

SUBSTRATES;

EID: 41449094688     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.045     Document Type: Article

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