High-quality oxide/nitride/oxide gate insulator for GaN MIS structures

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 458-464

  Gaffey, B ^a   Guido, L J ^a   Wang, X W ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

AC conductance technique; Capture cross section; GaN; Interface trap density; MIS; MOS

Indexed keywords

CAPACITORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC VARIABLES MEASUREMENT; GALLIUM NITRIDE; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SILICA; SILICON NITRIDE; THERMAL EFFECTS; VAPOR DEPOSITION;

CAPACITANCE VOLTAGE MEASUREMENT; CAPTURE CROSS SECTION; CONSTANT CURRENT STRESS MEASUREMENT; DIELECTRIC CHARGE DENSITY; GATE INSULATOR; INTERFACE TRAP DENSITY; JET VAPOR DEPOSITION; SURFACE POTENTIAL FLUCTUATION;

TRANSISTORS;

EID: 0035278825     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906436     Document Type: Article

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