Characterization of GaN MOS structures using photoanodically grown oxides with respect to FET devices

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Mistele, D ^a   Rotter, T ^a   Ferretti, R ^a   Fedler, F ^a   Klausing, H ^a   Semchinova, O K ^a   Stemmer, J ^a   Aderhold, J ^a   Graul, J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMISTRY; ELECTRONIC DENSITY OF STATES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); LITHOGRAPHY; METALLIZING; MOSFET DEVICES; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

PHOTOANODICALLY GROWN OXIDES; PHOTOCHEMICAL CELL; WET CHEMICAL OXIDE;

GALLIUM NITRIDE;

EID: 0035559704     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)