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Volumn 222, Issue 3, 2001, Pages 459-464

Effect of p-GaN:Mg layers on the turn-on voltage of p-n junction LED

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; LIGHT EMITTING DIODES; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

EID: 0035151319     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00930-1     Document Type: Article
Times cited : (17)

References (15)
  • 15
    • 0003961637 scopus 로고    scopus 로고
    • Prentice Hall International Editions, Englewood Edition, cliffs, NJ
    • B.G. Streetman, Solid State Electronic Devices, Prentice Hall International Editions, Englewood Edition, cliffs, NJ, p. 151.
    • Solid State Electronic Devices , pp. 151
    • Streetman, B.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.