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Electrochemical and Solid-State Letters

Volumn 13, Issue 4, 2010, Pages

MOS characteristics of metallorganic-decomposed CeO2 spin-coated on GaN

(4) Quah, Hock Jin a Cheong, Kuan Yew a Hassan, Zainuriah b Lockman, Zainovia a

a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING (Malaysia)

b SCHOOL OF PHYSICS (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWNS; ELECTRICAL CHARACTERISTIC; GAN SUBSTRATE; HIGHEST TEMPERATURE; METAL OXIDE SEMICONDUCTOR STRUCTURES; POST DEPOSITION ANNEALING;

GALLIUM NITRIDE; METALLIC COMPOUNDS; MOS DEVICES; ORGANOMETALLICS; SPIN DYNAMICS;

GALLIUM ALLOYS;

EID: 76749169028 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3290679 Document Type: Article

Times cited : (21)

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