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Volumn 28, Issue 3, 1999, Pages 257-260

Wet thermal oxidation of GaN

(8) Readinger, E D a Wolter, S D a Waltemyer, D L a Delucca, J M a Mohney, S E a Prenitzer, B I b Giannuzzi, L A b Molnar, R J c

a PENNSYLVANIA STATE UNIVERSITY (United States)

b University of Central Florida (United States)

c MIT LINCOLN LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC PROPERTIES; HETEROJUNCTIONS; NITRIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE; WET THERMAL OXIDATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032654388 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-999-0024-z Document Type: Article

Times cited : (65)

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