Normally off operation GaN-based MOSFETs for power electronics applications

Semiconductor Science and Technology

Volumn 25, Issue 12, 2010, Pages

  Niiyama, Yuki ^a   Ootomo, Shinya ^b   Li, Jiang ^a   Nomura, Takehiko ^a   Kato, Sadahiro ^a   Chow, T Paul ^c  

^a Advanced Power Device Research Association   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANNEALING; BREAKDOWN VOLTAGE; CONTACT LAYERS; CRITICAL ELECTRIC FIELD; ELECTRONICS APPLICATIONS; HIGH-POWER; HIGH-TEMPERATURE DEVICES; INTERFACE QUALITY; INTERFACE STATE; INTERFACE STATE DENSITY; LOW RESISTANCE; MATERIAL PROPERTY; METAL OXIDE SEMICONDUCTOR; MOS-FET; MOSFETS; NORMALLY OFF; POWER TRANSISTORS; POWER-LOSSES; SAFE OPERATION; SATURATION VELOCITY; WIDE BAND GAP;

DIELECTRIC DEVICES; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOS CAPACITORS; MOSFET DEVICES; POWER ELECTRONICS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES;

GALLIUM ALLOYS;

EID: 78650455536     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/12/125006     Document Type: Article

References (42)

1. Chow T P and Tyagi R 1994 Wide bandgap compound semiconductors for superior high-voltage unipolar power devices IEEE Trans. Electron. Devices 41 1481-3
2. Haung W 2008 High-voltage lateral MOS-gated FETs in gallium nitride PhD Dissertation Rensselaer Polytechnic Institute, Troy, NY
3. Yoshida S, Li J, Wada T and Takehara H 2003 High-power AlGaN/GaN HFET with a lower on-state resistance and a higher switching time for an inverter circuit Ext. Abst. 15th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD'03) (Cambridge, UK, 14-17 April 2003) vol S3.3 pp 58-61
4. Niiyama Y, Kato S, Sato Y, Iwami M, Li J, Takehara H, Kambayashi H, Ikeda N and Yoshida S 2006 Fabrication of AlGaN/GaN HFET with a high breakdown voltage on 4-inch Si (1 1 1) substrate by MOVPE Material Research Society (MRS) Fall Meeting (Boston, 27 November-1 December 2006) vol I16.6 p 234
5. Niiyama Y, Masuda M, Ikeda N and Yoshida S 2007 Induction heating system operation by soft switching GaN heterojunction field effect transistors Ext. Abst. 19th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD'07) (Jeju, Koria, 27-30 May 2007) vol P8-19 pp 157-60
6. Kuraguchi M, Takada Y, Suzuki T, Hirose M, Tsuda K, Saito W, Saito Y and Omura I 2007 Normally-off GaN-MISFET with well-controlled threshold voltage Phys. Status Solidi a 204 2010-3
7. Kuroda M, Ishida H, Ueda T and Tanaka T 2007 Nonpolar (1 1-2 0) plane AlGaN/GaN heterojunction field effect transistors on (1-1 0 2) plane sapphire J. Appl. Phys. 102 093703
8. Song D, Liu J, Cheng Z, Tang W C W, Lau K M and Chen K J 2007 Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse IEEE Electron Device Lett. 28 189-91
9. Irokawa Y, Nakano Y, Ishiko M, Kachi T, Kim J and Ren F 2004 MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors Appl. Phys. Lett. 84 2919-2921
10. Matocha K, Chow T P and Gutmann R J 2005 High-voltage normally off GaN MOSFETs on sapphire substrate IEEE Trans. Electron Devices 52 6-10
11. 2/(Vs) channel mobility Japan. J. Appl. Phys. 46 L599-L601
12. Nomura T, Kambayashi H, Niiyama Y, Ootomo S and Yoshida S 2008 High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates Solid-State Electron. 52 150-5
13. - GaN/sapphire substrate Ext. Abst. 18th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD'06) (Italy, 4-8 June 2006) pp 10-1
14. Maruska H P and Tietjen J J 1969 The preparation and properties of vapor-deposited single-crystal-line GaN Appl. Phys. Lett. 15 327-9
15. Nakasaki R, Hashizume T and Hasegawa H 2000 Insulator-GaN inter-face structures formed by plasma-assisted chemical vapor deposition Physica E 7 953-7
16. Huang W, Khan T and Chow T P 2006 Comparison of MOS capacitors on n-and p-type GaN J. Electron. Mater. 35 726-32
17. Kachi T 2006 Recent advances on GaN power devices Ext. Abst. 2006 Int. Conf. on Solid State Devices and Materials (SSDM), E-10-1 (Yokohama) pp 970-1
18. Pan C J, Chi G C, Pong B J, Sheu J K and Chen J Y 2004 Si diffusion in p-GaN J. Vac. Sci. Technol. B 22 1727-30
19. +-GaN formed by Si implantation into p-GaN J. Appl. Phys. 91 1845-48
20. Pearton S J, Vartuli C B, Zolper J C, Yuan C and Stall R A 1995 Ion implantation doping and isolation of GaN Appl. Phys. Lett. 67 1435-7
21. 2 Appl. Phys. Lett. 93 102112
22. Reshchikov M A and Morkoç H 2005 Luminescence properties of defects in GaN J. Appl. Phys. 97 061301
23. Qu B Z, Zhu Q S, Sun X H, Wan S K, Wang Z G, Nagai H, Kawaguchi Y, Hiramatsu K and Sawaki N 2003 Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition J. Vac. Sci. Technol. A 21 838-41
24. 2 on clean n-and p-type GaN (0 0 0 1) J. Appl. Phys. 93 3995-4004
25. Nicollian E H and Brews J R 2003 MOS (Metal Oxide Semiconductor) Physics and Technology (New York: Wiley-Interscience) p 77
26. Hasegawa H and Ohno H 1986 Unified disorder induced gap state model for insulator-semiconductor and metal-semiconductor interfaces J. Vac. Sci. Technol. B 4 1130-8
27. Apples J A and Vaes H M J 1979 High voltage thin layer devices (RESURF devices) IEDM Tech. Digest (Washington DC, December 3-5 1979) pp 238-41
28. Tang K, Li Z, Chow T P, Niiyama Y, Nomura T and Yoshida S Enhancement-mode GaN Hybrid MOS-HEMTs with Breakdown Voltage of 1300 V Ext. Abst. 15th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD'09) (Barcelona, Spain, 14-19 June 2009) B4P-E-4133 pp 279-82
29. Kern W and Puotinen D A 1970 Cleaning solution based on hydrogen peroxide for use in silicon semiconductor technology RCA Rev. 31 187-205
30. 2/GaN interface for enhanced operation field-effect transistors Phys. Status Solidi a 204 2032-6
31. Terman L M 1962 An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes Solid-State Electron. 5 285-99
32. Fukuda K, Kato M, Kojima K and Senzaki J 2004 Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C (0 0 0-1) face Appl. Phys. Lett. 84 2088-2090
33. Herman J S and Terry F L 1992 Hydrogen sulfide plasma passivation of gallium arsenide Appl. Phys. Lett. 60 716-717
34. Niiyama Y, Ootomo S, Kambayashi H, Nomura T and Yoshida S 2007 High activation of Si implanted un and Mg-doped GaN on sapphire substrate by using rapid thermal annealing Ext. Abst. 15th Int. Conf. on Crystal Growth (ICCG-15) (Salt Lake City, UT, 12-17 August 2007) wg-40
35. Niiyama Y, Kambayashi H, Ootomo S, Nomura T, Yoshida S and Chow T P 2008 Over 2 A operation at 250 °C of GaN metal-oxide-semiconductor field effect transistors on sapphire substrates Japan. J. Appl. Phys. 47 7128-30
36. ™ Transitors Proc. 19th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD) (Jeju, Koria, 27-30 May 2007) O6-1 pp 57-60
37. Niiyama Y, Ootomo S, Li J, Kambayashi H, Nomura T, Yoshida S, Sawano K and Shiraki Y 2008 Si ion implantation into Mg-doped GaN for fabrication of reduced surface field metal-oxide-semiconductor field-effect transistors Japan J. Appl. Phys. 47 5409-16
38. Niiyama Y, Kambayashi H, Ootomo S, Nomura T and Kato S 2009 Over 1500 V/2 A operation of GaN RESURF-MOSFETs on sapphire substrate Electron. Lett. 45 379-80
39. Niiyama Y, Kambayashi H, Ootomo S, Ikeda N, Nomura T and Kato S 2008 GaN MOSFETs with large current and normally-off operation ECS Transaction 16 161-8
40. Huang W, Chow T P, Niiyama Y, Nomura T and Yoshida S 2008 Lateral implanted RESURF GaN MOSFETs with BV up to 2.5 kV Proc. 20th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD) (Orlando, FL, 18-22 May 2008) pp 291-4
41. 2 Proc. 20th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD) (Orlando, FL, 18-22 May 2008) pp 295-8
42. Oka T and Nozawa T 2008 AlGaN/GaN recessed MIS-Gate HFET with high-threshold-voltage normally-off operation for power electronics applications IEEE Electron Device Lett. 29 668-70