Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics

Journal of Alloys and Compounds

Volumn 480, Issue 2, 2009, Pages 541-546

  Shih, C F ^a   Hung, K T ^a   Hsiao, C Y ^a   Shu, S C ^a   Li, W M ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; HfO2; MOS; Sputter

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CHEMICAL SOLUTIONS; DIELECTRIC CONSTANTS; EFFECTIVE OXIDE CHARGE; FLAT-BAND VOLTAGE; FRENKEL-POOLE EMISSION; GAN; HFO2; INTERFACE TRAP DENSITY; LEAKAGE MECHANISM; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOS; OXYNITRIDE; POST ANNEALING; SCHOTTKY EMISSIONS; SPUTTER;

ANNEALING; CAPACITANCE; CAPACITORS; CERAMIC CAPACITORS; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; ELECTRIC FIELDS; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOSFET DEVICES; OXIDE FILMS; PERMITTIVITY; SEMICONDUCTING GALLIUM; SURFACE TREATMENT;

MOS CAPACITORS;

EID: 67349239358     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.01.141     Document Type: Article

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