Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 624-628

  Lay, T S ^a   Liao, Y Y ^a   Hung, W H ^b   Hong, M ^c   Kwo, J ^c   Mannaerts, J P ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Gadolinium compounds; B1. Nitrides; B2. Dielectric materials; B2. Semiconducting gallium compounds

Indexed keywords

DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; GADOLINIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NITRIDES; OXIDES; PROFILOMETRY; SPUTTERING; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILE; GATE LEAKAGE; HIGH BREAKDOWN FIELDS; INTERFACES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18444388307     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.128     Document Type: Conference Paper

References (8)

1. E.J. Miller, X.Z. Dang, and E.T. Yu J. Appl. Phys. 88 2000 5951
2. T. Hashizume, J. Kotani, and H. Hasegawa Appl. Phys. Lett. 84 2004 4884
3. A. Chini, J. Wittich, S. Heikman, S. Keller, and S.P. DenBaars UK Mishra, IEEE Electron Device Lett. 25 2004 55
4. M. Hong, K.A. Anselm, J. Kwo, H.M. Ng, J.N. Baillargeon, A.R. Kortan, J.P. Mannaerts, A.Y. Cho, C.M. Lee, J.I. Chyi, and T.S. Lay J. Vac. Sci. Technol. B 18 2000 1453
5. T.S. Lay, W.D. Liu, M. Hong, J. Kwo, and J.P. Mannaerts Electron. Lett. 37 2001 595
6. J.M. Huheey Inorganic Chemistry 1983 Harper & Row Publishers New York
7. T.S. Lay, K.H. Huang, W.H. Hung, M. Hong, J. Kwo, and J.P. Mannaerts Solid-State Electron. 45 2001 423
8. T.S. Lay, M. Hong, J. Kwo, J.P. Mannaerts, W.H. Hung, and D.J. Huang Solid-State Electron. 45 2001 1679