메뉴 건너뛰기




Volumn 80, Issue 3, 2002, Pages 446-448

GaN metal-oxide-semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; FLAT-BAND VOLTAGE; LOW DENSITY; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS STRUCTURE; NEGATIVE OXIDE CHARGE; OPTIMIZED CONDITIONS; OXIDATION TIME; OXIDE LAYER; PHOTOELECTROCHEMICAL OXIDATION; POST TREATMENT; REVERSE LEAKAGE; THIN OXIDE LAYERS; THIN OXIDES;

EID: 79956003957     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436279     Document Type: Article
Times cited : (51)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.