High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer

Optics Express

Volumn 19, Issue 13, 2011, Pages 12658-12663

  Lee, Ming Lun ^a   Mue, T S ^b   Huang, F W ^b   Yang, J H ^a   Sheu, J K ^b  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR BOUNDARIES; MIS DEVICES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR INSULATOR BOUNDARIES;

ALTERNATING CURRENT; GALLIUM OXIDES; GATE LAYERS; METAL-INSULATOR-SEMICONDUCTORS; PHOTOELECTROCHEMICAL OXIDATION; REJECTION RATIOS; RESPONSIVITY; SPECTRAL RESPONSE; SPECTRAL RESPONSIVITY; ULTRA-VIOLET; ULTRA-VIOLET PHOTODETECTORS;

GALLIUM NITRIDE;

GALLIUM; GALLIUM NITRIDE; GALLIUM OXIDE;

ARTICLE; CHEMISTRY; ELECTRONICS; INSTRUMENTATION; METHODOLOGY; OPTICAL INSTRUMENTATION; OPTICS; PHOTOCHEMISTRY; SEMICONDUCTOR; ULTRAVIOLET RADIATION;

ELECTRONICS; GALLIUM; OPTICAL DEVICES; OPTICS AND PHOTONICS; PHOTOCHEMICAL PROCESSES; SEMICONDUCTORS; ULTRAVIOLET RAYS;

EID: 79959442506     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.012658     Document Type: Article

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