SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1399-1403

Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD

(3) Chang, Kow Ming a Cheng, Chao Chen a Lang, Chia Ching b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b Science Based Industrial Park (Taiwan)

Author keywords

ECR; GaN; Gate dielectric; MISFET; Silicon nitride

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; INTERFACES (MATERIALS); PERMITTIVITY; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTOR DIODES; SILICON NITRIDE;

CHARGE DENSITIES;

MISFET DEVICES;

EID: 0036721756 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(02)00085-0 Document Type: Article

Times cited : (38)

References (19)

1
- 0005985130
- (1999) J Appl Phys , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

2
- 36449002852
- (1995) Appl Phys Lett , vol.66 , pp. 1761
- Shul, R.J.¹ Kilcoyne, S.R.² Crawford, M.H.³ Parmeter, J.E.⁴ Vartuli, C.B.⁵ Abernathy, C.R.⁶ Pearton, S.J.⁷

3
- 3943098679
- (1997) J Electron Mater , vol.26 , pp. 266
- Ping, A.T.¹ Schmitz, A.C.² Adesida, I.³ Khan, M.A.⁴ Chen, Q.⁵ Yang, J.W.⁶

4
- 0033882740
- (2000) Solid-State Electron , vol.44 , pp. 649
- Cao, X.A.¹ Van Hove, J.M.² Klaassen, J.J.³ Polley, C.J.⁴ Wowchack, A.M.⁵ Chow, P.P.⁶

5
- 0032651806
- (1999) Mater Res Soc Symp Proc , vol.573 , pp. 247
- Gila, B.¹ Lee, K.N.² LaRoche, J.³ Ren, F.⁴ Donovan, S.M.⁵ Abernathy, C.R.⁶

6
- 0032295452
- (1998) Solid-State Electron , vol.42 , pp. 2177
- Ren, F.¹ Abernathy, C.R.² Mackenzie, J.D.³ Gila, B.P.⁴ Pearton, S.J.⁵ Hong, M.⁶

7
- 0032093834
- (1998) J Crystal Growth , vol.189 , Issue.190 , pp. 738
- Kawai, H.¹ Hara, M.² Nakamura, F.³ Asatsuma, T.⁴ Kobayashi, T.⁵ Imanaga, S.⁶

8
- 0035953718
- (2001) Electron Lett , vol.37 , pp. 595
- Lay, T.S.¹ Liu, W.D.² Hong, M.³ Kwo, J.⁴ Mannaerts, J.P.⁵

9
- 0032576518
- (1998) Appl Phys Lett , vol.73 , pp. 3893
- Ren, F.¹ Hong, M.² Chu, S.N.G.³ Marcus, M.A.⁴ Schurman, M.J.⁵ Baca, A.⁶

10
- 0001257727
- (2000) Appl Phys Lett , vol.77 , pp. 3230
- Johnson, J.W.¹ Luo, B.² Ren, F.³ Gila, B.P.⁴ Krishnamoorthy, W.⁵ Abernathy, C.R.⁶

11
- 21944449679
- (1998) Appl Phys Lett , vol.73 , pp. 809
- Arulkumaran, S.¹ Egawa, T.² Ishikawa, H.³ Jimbo, T.⁴ Umeno, M.⁵

12
- 0032644085
- (1999) Mater Res Soc Symp Proc , vol.573 , pp. 219
- Wang, Y.C.¹ Hong, M.² Kuo, J.M.³ Mannaerts, J.P.⁴ Kwo, J.⁵ Tsai, H.S.⁶

13
- 0034141006
- (2000) IEEE Electron Dev Lett , vol.21 , pp. 63
- Khan, M.A.¹ Hu, X.² Sumin, G.³ Lunev, A.⁴ Yang, J.⁵ Gaska, R.⁶

14
- 0031079176
- (1997) Solid-State Electron , vol.41 , pp. 177
- Blinari, S.C.¹ Doverspike, K.² Kelner, G.³ Dierich, H.B.⁴ Wickenden, A.E.⁵

15
- 0035278825
- (2001) IEEE Trans Electron Dev , vol.48 , pp. 458
- Gaffey, B.¹ Guido, L.J.² Wang, X.W.³ Ma, T.P.⁴

16
- 0033688936
- (2000) Physica E , vol.7 , pp. 953
- Nakasaki, R.¹ Hashizume, T.² Hasegawa, H.³

17
- 0001188528
- (1962) Solid-State Electron , vol.5 , pp. 285
- Terman, L.M.¹

18
- 0000382515
- (1996) J Appl Phys , vol.79 , pp. 8503
- Chang, K.M.¹ Tsai, J.Y.² Li, C.H.³ Yeh, T.H.⁴ Wang, S.W.⁵ Yang, J.Y.⁶

19
- 0141930653
- (2001) Phys Stat Sol (a) , vol.188 , Issue.1 , pp. 175
- Chang, K.M.¹ Lang, C.C.² Cheng, C.C.³

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