SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1399-1403

Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD

(3) Chang, Kow Ming a Cheng, Chao Chen a Lang, Chia Ching b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b Science Based Industrial Park (Taiwan)

Author keywords

ECR; GaN; Gate dielectric; MISFET; Silicon nitride

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; INTERFACES (MATERIALS); PERMITTIVITY; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTOR DIODES; SILICON NITRIDE;

CHARGE DENSITIES;

MISFET DEVICES;

EID: 0036721756 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(02)00085-0 Document Type: Article

Times cited : (37)

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