Low-temperature and rapid oxidation of GaN surface by saturated water vapor at high pressure

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Futatsuki, Takashi ^a,b   Oe, Taro ^a   Aoki, Hidemitsu ^b   Komatsu, Naoyoshi ^b   Kimura, Chiharu ^b   Sugino, Takashi ^b  

^a Japan Organo Co   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITROGEN REMOVAL; THERMOOXIDATION; WATER VAPOR; X RAY PHOTOELECTRON SPECTROSCOPY;

FIELD EFFECT TRANSISTOR (FETS); HIGH PERFORMANCE DEVICES; HIGH-PRESSURE CONDITION; LOW-TEMPERATURE OXIDATION; OXIDATION PROCESS; STOICHIOMETRIC COMPOSITIONS; THERMAL OXIDATION; VERY LOW TEMPERATURES;

TEMPERATURE;

EID: 77952475663     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C006     Document Type: Article

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