High-voltage SiC and GaN power devices

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 112-122

  Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Gallium nitride; New devices; Power semiconductor devices; Silicon carbide

Indexed keywords

ELECTRIC RECTIFIERS; GALLIUM NITRIDE; SEMICONDUCTOR MATERIALS; TRANSISTORS;

NEW DEVICES; POWER SEMICONDUCTOR DEVICES;

SILICON CARBIDE;

EID: 30344478241     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.057     Document Type: Conference Paper

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