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Volumn 89, Issue 18, 2006, Pages

Dielectric characterization of transparent epitaxial Ga2O 3 thin film on n-GaN/Al2O3 prepared by pulsed laser deposition

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); MOLECULAR ORIENTATION; PULSED LASER DEPOSITION; SURFACE ROUGHNESS;

DIELECTRIC CHARACTERIZATION; ELEMENTAL DISTRIBUTION; OXYGEN FLOW RATE;

THIN FILMS;

EID: 33750724450 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2374806 Document Type: Article

Times cited : (62)

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