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Volumn 509, Issue 31, 2011, Pages 8001-8007

Electrical characterization of Au/n-GaN metal-semiconductor and Au/SiO 2/n-GaN metal-insulator-semiconductor structures

Author keywords

DLTS measurements; Electrical characteristics; Interface state density; Metal insulator semiconductor; Metal semiconductor; n Type GaN

Indexed keywords

ELECTRICAL CHARACTERISTICS; INTERFACE STATE DENSITY; METAL-INSULATOR- SEMICONDUCTOR; METAL-SEMICONDUCTOR; N-TYPE GAN;

EID: 79959761533     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.05.055     Document Type: Article
Times cited : (77)

References (40)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.