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Volumn 509, Issue 31, 2011, Pages 8001-8007
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Electrical characterization of Au/n-GaN metal-semiconductor and Au/SiO 2/n-GaN metal-insulator-semiconductor structures
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Author keywords
DLTS measurements; Electrical characteristics; Interface state density; Metal insulator semiconductor; Metal semiconductor; n Type GaN
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Indexed keywords
ELECTRICAL CHARACTERISTICS;
INTERFACE STATE DENSITY;
METAL-INSULATOR- SEMICONDUCTOR;
METAL-SEMICONDUCTOR;
N-TYPE GAN;
CARRIER CONCENTRATION;
CONCENTRATION (PROCESS);
CURRENT VOLTAGE CHARACTERISTICS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DIODES;
GALLIUM NITRIDE;
METAL INSULATOR BOUNDARIES;
METALS;
MIS DEVICES;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SEMICONDUCTOR METAL BOUNDARIES;
VANADIUM;
SEMICONDUCTOR DIODES;
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EID: 79959761533
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2011.05.055 Document Type: Article |
Times cited : (77)
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References (40)
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