Thermodynamics, structure and kinetics in the system Ga-O-N

Progress in Solid State Chemistry

Volumn 37, Issue 2-3, 2009, Pages 132-152

  Martin, Manfred ^a   Dronskowski, Richard ^a   Janek, Jürgen ^b   Becker, Klaus Dieter ^c   Roehrens, Daniel ^a   Brendt, Jochen ^a   Lumey, Marck W ^a   Nagarajan, Lakshmi ^a   Valov, Ilia ^b   Börger, Alexander ^c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Ga2O3; Galon; Ammonolysis; Amorphous oxide; Ga O N; GaN; GaOx; GaOxNy; In situ XAS; Insulator metal transition; Nitrogen solubility; Non stoichiometry; Nucleation; Oxynitrides

Indexed keywords

AMMONOLYSIS; AMORPHOUS OXIDES; GAN; IN-SITU XAS; INSULATOR METAL TRANSITION; NITROGEN SOLUBILITY; NON-STOICHIOMETRY; OXYNITRIDES;

ABSORPTION; ABSORPTION SPECTROSCOPY; CRYSTALLINE MATERIALS; DENSITY FUNCTIONAL THEORY; DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH KINETICS; HOLOGRAPHIC INTERFEROMETRY; METAL INSULATOR TRANSITION; NITROGEN; NUCLEATION; OXIDATION; RIETVELD METHOD; RIETVELD REFINEMENT; SEMICONDUCTING GALLIUM; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLUBILITY; STOICHIOMETRY; TERNARY SYSTEMS; THERMODYNAMICS; TIME VARYING SYSTEMS; WAVE FUNCTIONS; X RAY ABSORPTION; X RAY ABSORPTION SPECTROSCOPY; ZINC SULFIDE;

REACTION KINETICS;

EID: 70749159818     PISSN: 00796786     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.progsolidstchem.2009.11.005     Document Type: Review

References (74)

1. Akasaki I., and Amano H. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters. Jpn J Appl Phys 36 (1997) 5393-5408
2. Nakamura S., Pearton S., and Fasol G. The blue laser diode. The complete story. 2nd ed. (2000), Springer, Berlin
3. 3. J Appl Phys 74 (1993) 300-305
4. 3. J Phys Chem Solids 28 (1976) 403-404
5. 3 single crystals. Solid State Commun 18 (1976) 1223-1225
6. Kinski I., Scheiba F., and Riedel R. Advances in gallium oxonitride ceramics: a new class of materials in the system Ga-O-N. Adv Eng Mater 7 (2005) 921-927
7. Slack G.A., Schowalter L.J., Morelli D., and Freitas Jr. J.A. Some effects of oxygen impurities on AlN and GaN. J Cryst Growth 246 (2002) 287-298
8. Chen W.M., Buyanova I.A., Wagner M., Monemar B., Lindström L.J., Amano H., et al. Role of the substitutional oxygen donor in the residual n-type conductivity in GaN. MRS Internet J Nitride Semicond Res 4S1 G5.4 (1999)
9. Wetzel C., Amano H., Akasaki I., Ager J.W., Grzegory I., and Meyer B.K. DX-like behavior of oxygen in GaN. Physica B 302-303 (2001) 23-38
10. Korotkov R.Y., and Wessels B.W. Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy. MRS Internet J Nitride Semicond Res 5S1 W3.80 (2000)
11. Chung B.C., and Gershenzon M. The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy,. J Appl Phys 72 (1992) 651-659
12. Van de Walle C.G. Effects of impurities on the lattice parameters of GaN. Phys Rev B 68 (2003) 165209
13. In: Pankove J.I., Wang H.L., Bachmann K.J., and Schwab C. (Eds). Non-stoichiometry in semiconductors (1992), Elsevier Science
14. 2O. J Am Chem Soc 74 (1952) 719-722
15. Zinkevich M., and Aldinger F. Thermodynamic assessment of the gallium-oxygen system. J Am Ceram Soc 87 (2004) 683-691
16. Åhman J., Svensson G., and Albertsson J. A reinvestigation of β-gallium oxide. Acta Crystallogr C 52 (1996) 1336-1338
17. Barin I. Thermochemical data of pure substances (1995), VCH Publishers Inc., Weinheim
18. 3. Phys Rev 140 (1965) A316-A319
19. 3. J Phys Chem Solids 59 (1998) 1241-1249
20. 3 thin film for oxygen sensor at high temperature. Appl Surf Sci 175-176 (2001) 721-725
21. 3 thin films. Appl Phys Lett 77 (2000) 4166-4168
22. Cho S., Lee J., Park I., and Kim S. New luminescence band due to nitrogen impurities in gallium oxide powders. Mater Lett 57 (2002) 1004-1009
23. Fleischer M., Hoellbauer L., Born E., and Meixner H. J Am Ceram Soc 80 (1997) 2121-2125
24. Bartic M., Baban C.I., Suzuki H., Ogita M., and Isai M. β-Gallium oxide as oxygen gas sensors at a high temperature. J Am Ceram Soc 90 (2007) 2879-2884
25. Ambacher O. Growth and applications of group III-nitrides. J Phys D: Appl Phys 31 (1998) 2653-2711
26. 3N, GaN und InN. Z Anorg Allg Chem 239 (1938) 282-287
27. Balkas C.M., and Davis R.F. Synthesis routes and characterization of high-purity, single-phase gallium nitride powders. J Am Ceram Soc 79 (1996) 2309-2312
28. Pearton S.J., and Ren F. GaN electronics. Adv Mater 12 (2000) 1571-1580
29. Schwenzer B., Hu J., Seshadri R., Keller S., den Baars S.P., and Mishra U.K. Gallium nitride powders from ammonolysis: influence of reaction parameters on structure and properties. Chem Mater 16 (2004) 5088-5095
30. 3 and its application to the sublimation source for the growth of GaN film. J Cryst Growth 264 (2004) 1-6
31. Jung W.S. Reaction intermediate(s) in the conversion of β- gallium oxide to gallium nitride under a flow of ammonia. Mater Lett 57 (2002) 110-114
32. 3-GaN. J Solid State Chem, submitted for publication
33. 3 and the oxidation of GaN. Phys Chem Chem Phys 11 (2009) 3127-3137
34. Rodriguez-Carvajal J. Recent advances in magnetic structure determination by neutron powder diffraction. Physica B 192 (1993) 55-69
35. Koops U., Hesse D., and Martin M. High-temperature oxidation of CoGa: influence of the crystallographic orientation on the oxidation rate. J Mater Res 17 (2002) 2489-2498
36. x)O. J Synchrotron Radiat 6 (1999) 489-491
37. Frahm R. New method for time dependent X-ray absorption studies. Rev Sci Instrum 60 (1989) 2515-2518
38. Ravel B. Athena user's guide 1.0; 2007.
39. Koningsberger D.C., and Prins R. X-ray absorption: principles, applications, techniques of EXAFS, SEXAFS and XANES (1988), Wiley-Interscience, New York
40. Newville M., Livins P., Yacoby Y., Rehr J.J., and Stern E.A. Near-edge X-ray-absorption fine structure of Pb: a comparison of theory and experiment. Phys Rev B 47 (1993) 14126-14131
41. Avrami M. Kinetics of phase change. I. General theory. J Chem Phys 7 (1939) 1103-1112
42. Avrami M. Kinetics of phase change. II. Transformation-time relations for random distribution of nuclei. J Chem Phys 8 (1940) 212-224
43. Avrami M. Granulation, phase change, and microstructure, kinetics of phase change. III. J Chem Phys 9 (1941) 177-184
44. Burke J. The kinetics of phase transformations in metals (1965), Pergamon Press
45. Humphreys F.J., and Hatherly M. Recrystallisation and related annealing phenomena (2004), Elsevier
46. Deininger C., Egerton R.F., Hofer F., Jouffrey B., Krahl D., Leapman R.D., et al. In: Reimer L. (Ed). Energy-filtering transmission electron microscopy (1995), Springer, Berlin Heidelberg
47. Wolter S.D., Mohney S.E., Venugopalan H., Wickenden A.E., and Koleske D.D. Kinetic study of the oxidation of gallium nitride in dry air. J Electrochem Soc 145 (1998) 629-632
48. McCauley J.W., and Corbin N.D. Phase relations and reaction sintering of transparent cubic aluminium oxynitride spinel (ALON). J Am Ceram Soc 62 (1979) 476-479
49. Puchinger M., Kisailus D.J., Lange F.F., and Wagner T. Microstructural evolution of precursor-derived gallium nitride thin films. J Cryst Growth 245 (2002) 219-227
50. Kroll P., Dronskowski R., and Martin M. Formation of spinel-type gallium oxynitrides: a density-functional study of binary and ternary phases in the system Ga-O-N. J Mater Chem 15 (2005) 3296-3302
51. Kroll P. Spinel-type gallium oxynitrides attainable at high pressure and high temperature. Phys Rev B 72 (2005) 144407
52. 3N) synthesis and characterization: an experimental and theoretical study. Chem Mater 17 (2005) 5465-5472
53. Kinski I., Miehe G., Heymann G., Theissmann R., Riedel R., and Huppertz H. High-pressure synthesis of a gallium oxonitride with a spinel-type structure. Z Naturforsch 60b (2005) 831-836
54. Fang C.M., Metselaar R., Hintzen H.T., and de With G. Structure models for γ-aluminium oxynitride from ab initio calculations. J Am Ceram Soc 84 (2001) 2633-2637
55. 3-AlN. J Electrochem Soc 109 (1962) 1050-1054
56. McCauley J.W. A simple model for aluminium oxynitride spinels. J Am Ceram Soc 61 (1978) 372-373
57. Pisch A., and Schmid-Fetzer R. In situ decomposition study of GaN thins films. J Cryst Growth 187 (1998) 329-332
58. Lorenz M.R., and Binkowski B.B. Preparation, stability, and luminescence of gallium nitride. J Electrochem Soc 109 (1962) 24-26
59. 3+ doped gallium oxynitride prepared by precursor nitridation. Solid State Commun 147 (2008) 41-45
60. Kikkawa S., Nagasaka K., Takeda T., Bailey M., Sakurai T., and Miyamoto Y. Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route. J Solid State Chem 180 (2007) 1984-1989
61. Kikkawa S., Ohtaki S., Takeda T., Yoshiasa A., Sakurai T., and Miyamoto Y. Manganese doped gallium oxynitride prepared by nitridation of citrate precursor. J Alloys Compd 450 (2008) 152-156
62. Shannon R.D. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Crystallogr A32 (1976) 751-767
63. Yamamotoa S., Kikkawa S., Masubuchia Y., Takeda T., Okube M., Yoshiasa A., et al. Preparation of gallium oxynitride in the presence of iron through a citrate route. Mater Res Bull 44 (2009) 1656-1659
64. Nagarajan L., De Souza R.A., Samuelis D., Valov I., Börger A., Janek J., et al. A chemically driven insulator-metal transition in non-stoichiometric amorphous gallium oxide,. Nat Mater 6 (2008) 391-398
65. Mott N.F. Metal-insulator transition (1974), Taylor & Francis, London
66. Gebhard F. The mott metal-insulator transition (1997), Springer, Berlin
67. Chrisey D.B., and Hubler G.K. Pulsed laser deposition of thin films (1994), John Wiley and Sons, New York
68. Wilson R.G., Stevie F.A., and Magee C.W. Secondary ion mass spectrometry (1989), John Wiley and Sons, New York
69. Ankudinov A.L., Ravel B., Rehr J.J., and Conradson S.D. Real-space multiple-scattering calculation and interpretation of X-ray-absorption near-edge structure. Phys Rev B 58 (1998) 7565-7576
70. Perdew J.P., Chevary J.A., Vosko S.H., Jackson K.A., Pederson M.R., Singh D.J., et al. Atoms, molecules, solids, and surfaces - applications of the generalized gradient approximation for exchange and correlation. Phys Rev B 46 (1992) 6671-6687
71. Becke A.D. Density-functional thermochemistry 3. The role of exact exchange. J Chem Phys 98 (1993) 5648-5652
72. Anderson P.W. Absence of diffusion in certain random lattices. Phys Rev 109 (1958) 1492-1505
73. Mott N.F. Electrons in disordered structures. Adv Phys 16 (1967) 49-144
74. Tauc J. Amorphous and liquid semiconductors (1974), Plenum, London