High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2183-2186

  Chang, W H ^a   Lee, C H ^a   Chang, P ^a   Chang, Y C ^a   Lee, Y J ^a   Kwo, J ^a   Tsai, C C ^b   Hong, J M ^b   Hsu, C H ^c   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b HUGA Optotech Inc   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

A1. Crystal structure; A2. Single crystal growth; A3. Molecular beam epitaxy; B1. Gadolinium compounds; B1. GaN; B2. Dielectric materials

Indexed keywords

CAPACITANCE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; GADOLINIUM; GADOLINIUM COMPOUNDS; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOS CAPACITORS; OZONE WATER TREATMENT; PHASE INTERFACES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; SULFUR COMPOUNDS; SYNCHROTRON RADIATION; X RAY DIFFRACTION;

A1. CRYSTAL STRUCTURE; A2. SINGLE CRYSTAL GROWTH; A3. MOLECULAR BEAM EPITAXY; B1. GADOLINIUM COMPOUNDS; B1. GAN; B2. DIELECTRIC MATERIALS;

DIELECTRIC MATERIALS;

EID: 63349096315     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.079     Document Type: Article

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