Oxidized GaN(0001) surfaces studied by scanning tunneling microscopy and spectroscopy and by first-principles theory

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2080-2086

  Dong, Y ^a   Feenstra, R M ^a   Northrup, J E ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; ELECTRON COUNTING; MOLECULAR OXYGEN; SURFACE PHASES;

AUGER ELECTRON SPECTROSCOPY; INTERFACIAL ENERGY; MONOLAYERS; OXYGEN; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

GALLIUM NITRIDE;

EID: 33746520065     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2214713     Document Type: Article

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