Temperature stability of breakdown voltage on SiC power Schottky diodes with different barrier heights

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 933-936

  Pierobon, R ^a,b   Meneghesso, G ^a,b   Zanoni, E ^a,b   Roccaforte, F ^c   La Via, F ^c   Raineri, V ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b INFM   (Italy)

^c CNR IMM   (Italy)

Author keywords

Breakdown; Nickel suicide; Power diodes; Schottky barrier; Silicon carbide; Temperature; Titanium

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC BREAKDOWN; SILICON CARBIDE; THERMODYNAMIC STABILITY; VOLTAGE MEASUREMENT;

SCHOTTKY METALS; SCHOTTKY RECTIFIERS; SHORT REVERSE RECOVERY; TUNG'S MODEL;

SCHOTTKY BARRIER DIODES;

EID: 35148850134     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.933     Document Type: Conference Paper

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