Surface and bulk leakage currents in high breakdown GaN rectifiers

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 619-622

  Ren, F ^a   Zhang, A P ^a   Dang, G T ^a   Cao, X A ^a   Cho, H ^a   Pearton, S J ^a   Chyi, J I ^b   Lee, C M ^b   Chuo, C C ^b  

^a University of Florida   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

BIAS VOLTAGES; REVERSE LEAKAGE CURRENTS; SCHOTTKY DIODE RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0033892082     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00196-3     Document Type: Article

References (24)

1. Brown E.R. Solid-State Electron. 42:1998;2117.
2. Bandic Z.Z., Bridger P.M., Piquette E.C., McGill T.C., Vaudo R.P., Phanse V.M., Redwing J.M. Appl. Phys. Lett. 74:1999;1266.
3. Dmitriev V.A., Irvine K.G., Carter C.H. Jr., Kuznetsov N.I., Kalinic E.V. Appl. Phys. Lett. 68:1996;229.
4. Trivedi M., Shenai K. J. Appl. Phys. 85:1999;6889.
5. Pearton S.J., Zolper J.C., Shul R.J., Ren F. J. Appl. Phys. 86:1999;1.
6. Weitzel C.E., Palmour J.W., Carter C.H. Jr., Moore K., Nordquist K.J., Allen S., Thero C., Bhatnagar M. IEEE Trans. Electron Devices. 43:1996;1732.
7. Baliga B.J. Power Semiconductor Devices. 1996;ITP Publishers, Boston.
8. Harris C.I., Konstantinov A.O. Phys. Scr. 779:1999;27.
9. Shoen K.J., Woodall J.M., Cooper J.A., Melloch M.R. IEE Trans. Electron Devices. 45:1998;1595.
10. Dahlquist F., Zetterling C.M., Ostling M., Rottner K. Mat. Sci. For. 264/268:1998;1061.
11. Casady J.B., Agarwal A.K., Seshahri S., Siergiej R.R., Rowland L.B., MacMillan M., Sheridan D.C., Sanger P.A., Brandt C.D. Solid-State Electron. 42:1998;2165.
12. Irvine K.G., Singh R., Paisley M.H., Palmour J.W., Kordina O., Carter C.H. Jr. Mat. Res. Soc. Symp. Proc. 512:1998;119.
13. Cao XA, Cho H, Pearton SJ, Dang GT, Zhang AP, Ren F, Shul RJ, Zhang L, Hickman R, Van Hove JM. 75, 483 (1999).
14. Sze S.M. Physics of semiconductor devices. 1981;Wiley Interscience, NY.
15. Khemka V., Patel R., Chow T.P., Gutman R.J. Solid-State Electron. 43:1999;2019.
16. Raghunathan R., Alok D., Baliga B.J. IEEE Electron. Dev. Lett. 16:1995;226.
17. Khemka V., Chow T.P., Gutman R.J. J. Electron. Mater. 27:1998;112.
18. Held R., Kaminski N., Neimann E. Proc. Int. Conf. on SiC and Related Mater., Stockholm. 1997;1057-1060.
19. Alok D., Egloff R., Arnold E. Proc. Int. Conf. on SiC and Related Mater., Stockholm. 1997;924-932.
20. Singh R., Palmour J.W. IEEE Int. Symp. Power Semicond. IC's. 1997;157-160 Weimer, Germany.
21. Wahab O., Kimoto T., Ellison A., Hallin C., Tuominen M., Yakinova R., Henry A., Bergman J.A., Janzen E. Appl. Phys. Lett. 72:1998;445.
22. Mitlehner H., Bartsch W., Bruckmann M., Dohnke K.O., Weinert V. IEEE Int. Symp. Power Semicond. Dev. IC's. 1997;165-168 Weimer, Germany.
23. Saxena V., Steckl A.J. Proc. Int. Conf. on SiC and Related Mater., Stockholm. 1997;937-940.
24. Itoh A., Kimoto T., Matsumani H. Proc. Int. Conf. SiC and Related Mater, Kyoto. 1995;689-692.