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Volumn 94, Issue 11, 2003, Pages 7201-7205
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Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga 0.65N Schottky diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
BINDING ENERGY;
CARRIER CONCENTRATION;
CHEMICAL BONDS;
CONCENTRATION (PROCESS);
CURRENT VOLTAGE CHARACTERISTICS;
GALLIUM NITRIDE;
HALL EFFECT;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOEMISSION;
PLATINUM;
POSITIVE IONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SPECTROSCOPIC ANALYSIS;
SYNCHROTRON RADIATION;
ULTRAVIOLET DETECTORS;
X RAY DIFFRACTION ANALYSIS;
CHEMICAL BONDING STATES;
MOLE FRACTION;
VALANCE-BAND SPECTRA;
SCHOTTKY BARRIER DIODES;
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EID: 0346962327
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1625101 Document Type: Article |
Times cited : (22)
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References (14)
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