Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1819-1822

  Lin, Yow Jon ^a   Ker, Quantum ^a   Ho, Ching Yao ^a   Chang, Hsing Cheng ^a   Chien, Feng Tso ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; FERMI LEVEL; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE STATE DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0041510252     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1591417     Document Type: Article

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