Development of enhancement mode AlN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  Chang, C Y ^a   Pearton, S J ^a   Lo, C F ^a   Ren, F ^a   Kravchenko, I I ^b   Dabiran, A M ^c   Wowchak, A M ^c   Cui, B ^c   Chow, P P ^c  

^a University of Florida   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL OXIDE; ALN BARRIERS; CURRENT VOLTAGE CURVE; DEPLETION MODES; ENHANCEMENT MODES; GATE CURRENT; GATE METALLIZATION; METAL OXIDE SEMICONDUCTOR; MODE STRUCTURE; OXYGEN PLASMA TREATMENTS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; OXYGEN; PLASMA APPLICATIONS; PLASMAS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67649946005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3168648     Document Type: Article

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