High voltage (450 V) GaN Schottky rectifiers

Applied Physics Letters

Volumn 74, Issue 9, 1999, Pages 1266-1268

  Bandic Z Z ^a   Bridger, P M ^a   Piquette, E C ^a   McGill, T C ^a   Vaudo, R P ^b   Phanse, V M ^b   Redwing, J M ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Epitronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000110525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123520     Document Type: Article

References (18)

1. N. R. Perkins, M. N. Horton, Z. Z. Bandić, T. C. McGill, and T. F. Kuech, Mater. Res. Soc. Symp. Proc. 395, 243 (1996).
2. Z. Z. Bandić, P. M. Bridger, E. C. Piquette, T. F. Kuech, and T. C. McGill, Mater. Res. Soc. Symp. Proc. 483, 399 (1998).
3. Z. Z. Bandić, E. C. Piquette, P. M. Bridger, R. A. Beach, T. F. Kuech, and T. C. McGill, Solid-State Electron. 42, 2289 (1998).
4. L. Wang, M. I. Nathan, T. H. Lim, M. A. Khan, and Q. Chen, Appl. Phys. Lett. 68, 1267 (1996).
5. S. N. Mohammad, Z. Fan, A. E. Botchkarev, W. Kim, O. Aktas, A. Salvador, and H. Morkoc, Electron. Lett. 32, 598 (1996).
6. E. V. Kalinina, N. I. Kuznetsov, V. A. Dmitriev, K. G. Irvine, and C. H. Carter, Jr., J. Electron. Mater. 25, 831 (1998).
7. P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki, Appl. Phys. Lett. 63, 2676 (1993).
8. E. C. Piquette, Z. Z. Bandić, and T. C. McGill, Mater. Res. Soc. Symp. Proc. 482, 1089 (1998).
9. Q. Z. Liu and S. S. Lau, Solid-State Electron. 42, 677 (1998) and references cited therein.
10. R. P. Vaudo, V. M. Phanse, M. C. Cattrel, and J. M. Redwing, 2nd International Conference on Nitride Semiconductors, Tokushima, Japan, 25-31 October 1997.
11. D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).
12. D. C. Look and R. J. Molnar, Appl. Phys. Lett. 70, 3377 (1997).
13. W. Götz, J. Walker, L. T. Romano, N. M. Johnson, and R. J. Molnar, Mater. Res. Soc. Symp. Proc. 449, 525 (1997).
14. Y. Golan, X. H. Wu, J. S. Speck, R. P. Vaudo, and V. M. Phanse, Appl. Phys. Lett. 73, 3090 (1998).
15. W. Götz, L. T. Romano, B. S. Krusor, N. M. Johnson, and R. J. Molnar, Appl. Phys. Lett. 69, 242 (1996).
16. B. J. Baliga, Power Semiconductor Devices (ITP P. Boston, 1996), p. 76.
17. N. Dyakonova, A. Dickens, M. Shur, R. Gaska, and J. W. Yang, Appl. Phys. Lett. 72, 2562 (1998)
18. J. Kolnik, I. H. Ogusman, K. F. Brennan, R. Wang, and P. P. Ruden, J. Appl. Phys. 82, 726 (1997).