Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 336-339

  Iucolano, F ^a,b   Giannazzo, F ^a   Roccaforte, F ^a   Romano, L ^b   Grimaldi, M G ^b   Raineri, V ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

Electrical activation; GaN; Hall measurements; Scanning capacitance microscopy; Si ions implantation

Indexed keywords

CHEMICAL ACTIVATION; EPITAXIAL FILMS; GALLIUM NITRIDE; ION IMPLANTATION; RAPID THERMAL ANNEALING; SCANNING PROBE MICROSCOPY;

ELECTRICAL ACTIVATION; HALL MEASUREMENTS; ROOM TEMPERATURE; SCANNING CAPACITANCE MICROSCOPY;

CARRIER CONCENTRATION;

EID: 33947681872     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.129     Document Type: Article

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