Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy

Diamond and Related Materials

Volumn 15, Issue 9, 2006, Pages 1472-1477

  Guy, O J ^a   Doneddu, D ^a   Chen, L ^a   Jennings, M R ^a   Ackland, M P ^a   Baylis, R ^a   Holton, M D ^a   Dunstan, P ^a   Wilks, S P ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Electrical properties characterization; Scanning probe techniques; Schottky diodes; Silicon carbide (SiC)

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; MORPHOLOGY; PLASMA ETCHING; SILICON CARBIDE; SURFACE ROUGHNESS;

ELECTRICAL PROPERTIES CHARACTERIZATION; SCANNING PROBE TECHNIQUES; SCHOTTKY DIODES;

SCHOTTKY BARRIER DIODES;

EID: 33746742327     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.11.010     Document Type: Article

References (32)

1. Morisette D.T., Cooper Jr. J.A., Melloch M.R., Dolny G.M., Shenoy P.M., Zafrani M., and Gladish J. IEEE Transactions on Electron Devices 48 (2001) 349
2. The EU Framework V 'Establish Silicon Carbide Applications in Power Electronics in Europe (ESCAPEE)' project. ESCAPEE (GRD1-2000-25337) and CICYT project no. TIC2000-1403-C03-01/03.
3. Planson D., Locatelli M.L., Ortolland S., Chante J.P., Mitlehner H., and Stephani D. Mater. Sci. Eng. Part B 46 (1997) 210
4. Kimoto K., and Inoue N. Phys. Status Solidi, A 162 (1997) 263
5. Troffer T., Schadt M., Frank T., Itoh H., Pensl G., Heindl J., Strunk H.P., and Maier M. Phys. Status Solidi, A 162 (1997) 277
6. Saddow S.E., Williams J., Isaacs-Smith T., Capano M., Copper J.A., Mazzola M.S., Hsieh A.J., and Cassady J.B. Mat. Sci. Forum 338-342 (2000) 901
7. Svensson B.G., Hallen A., Linnarsson M.K., Kuznetsov A.Y., Janson M.S., Abery D., Osterman J., Persson P.O.A., Hultman L., Storasta L., Carlsson F.H.C., Bergman J.P., Jagadish C., and Morvan E. Mat. Sci. Forum 353-356 (2001) 549
8. Tamura S., Kimoto T., Matsunami H., Okada M., Kanazawa S., and Kimura I. Mat. Sci. Forum 338-342 (2000) 849
9. Younes G., Ferro G., Jacquier C., Dazord J., and Monteil Y. Appl. Surf. Sci. 207 (2003) 200
10. Capano M.A., Ryu S., Melloch M.R., Cooper Jr. J.A., and Buss M.R. J. Electron. Mater. 27 4 (1998) 370
11. Thomas C., Taylor C., Griffin J., Rose W.L., Spencer M.G., Capano M., Rendakova S., and Kornegay K. MRS Proc. 572 (1999) 45
12. Vathulya V.R., and White M.H. Solid-State Electron. 44 (2000) 309
13. Younes G., Ferro G., Jacquier C., Dazord J., and Monteil Y. Appl. Surf. Sci. 207 (2003) 200
14. Tournier D., Perez-Tomas A., Godignon P., Millan J., Mank H., Turover D., Hinchley D., and Rhodes J. Proc. IEEE 17th Int. Symp. on Power Semiconductor Dev. and ICs (ISPSD). Santa Barbara, CA, USA, May 22-26 (2005) 239
15. Morrison D.J., Pidduck A.J., Moore V., Wilding P.J., Hilton K.P., Uren M.J., and Johnson C.M. Mat. Sci. Forum 338-342 (2000) 1199
16. Tucker J.B., Mitra S., Papanicolaou N., Siripuram A., Rao M.V., and Holland O.W. Diamond Relat. Mater. 11 (2002) 392
17. Negoro Y., Katsumoto K., Kimoto T., and Matsunami H. J. Appl. Phys. 96 (2004) 224
18. L.B. Ruppalt, S. Stafford, D. Yuan, K.A. Jones, M.H. Ervin, K.W. Kirchner, T.S. Zheleva, M.C. Wood, B.R. Geil, E. Forsythe, R.D. Vispute, T. Venkatesan, 47 (2003) 253-7.
19. Jones K.A., Shah P.B., Kirchner K.W., Lareau R.T., Wood M.C., Ervin M.H., Vispute R.D., Sharma R.P., Venkatesan T., and Holland O.W. Mater. Sci. Eng. B61-62 (1999) 281
20. Vassilevski K.V., Wright N.G., Nikitina I.P., Horsfall A.B., O'Neill A.G., Uren M.J., Hilton K.P., Masterton A.G., Hydes A.J., and Johnson C.M. Semicond. Sci. Technol. 20 (2005) 271
21. Negoro Y., Katsumoto K., and Kimoto T. Mat. Sci. Forum 457-460 (2004) 933
22. Senzaki J., Fukuda K., Imai S., Tanaka Y., Kobayashi N., Tanoue H., Okushi H., and Arai K. Appl. Surf. Sci. 159-160 (2000) 544
23. Crofton J., and Sriram S. IEEE Trans. Electron Devices 43 12 (December 1996) 2305
24. Oyama S., Hashizume T., and Hasegawa H. Appl. Surf. Sci. 190 (2002) 322
25. Bhatnagar M., Baliga B.J., Kirk H.R., and Rozgonyi G.A. IEEE Trans. Electron Devices 43 1 (January 1996) 150
26. Morrison D.J., Pidduck A.J., Moore V., Wilding P.J., Hilton K.P., Uren M.J., and Johnson C.M. Mat. Sci. Forum 338-342 (2000) 1199-1202
27. Kestle A., Wilks S.P., Dunstan P.R., Pritchard M., Pope G., Koh A., and Mawby P.A. Mat. Sci. Forum 338-342 (2000) 1025
28. Aboelfotoh M., and Doyle J.P. Phys. Rev. B 59 (1999) 10823
29. Wimbauer T., Meyer B.K., Hofstaetter A., Scharmann A., and Verhof H. Phys. Rev. B 56 (1997) 7384
30. Wenchang L., Kaiming Z., and Xide X. J. Phys., Condens. Matter 5 (1993) 891
31. Han S.Y., and Lee J.-L. J. Electrochem. Soc. 149 3 (2002) G189
32. Tan J., Cooper Jr. J.A., and Melloch M.R. IEEE Electron Device Lett. 19 12 (Dec. 1998)