I-V characteristics of AuNi Schottky diodes on GaN with Si N x nanonetwork

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Xie, Jinqiao ^a,b   Fu, Yi ^c   Ni, Xianfeng ^c   Chevtchenko, Serguei ^c   Morko̧, Hadis ^c  

^a Virginia Commonwealth University   (United States)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

LINE DEFECT DENSITIES; LINEWIDTH; NANONETWORKS; X RAY ROCKING CURVES;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; GOLD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOTECHNOLOGY; PHOTOLUMINESCENCE; SILICON NITRIDE;

SCHOTTKY BARRIER DIODES;

EID: 33749991126     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2359294     Document Type: Article

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