Ellipsometric study of thermal silicon oxide and sacrificial silicon oxide on 4H-SiC

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1337-1340

  Chen, L ^a   Guy, O J ^a   Pope, G ^a   Teng, K S ^a   Maffeis, T ^a   Wilks, S P ^a   Mawby, P A ^a   Jenkins, T ^b   Brieva, A ^b   Hayton, D J ^b  

^a SWANSEA UNIVERSITY   (United Kingdom)

^b ABERYSTWYTH UNIVERSITY   (United Kingdom)

Author keywords

Ellipsometric; LEED; Sacrificial silicon oxide; SiC; UHV

Indexed keywords

ANNEALING; ELLIPSOMETRY; LOW ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; OXIDATION; REFRACTIVE INDEX; SOLVENTS; SURFACE ROUGHNESS; ULTRAHIGH VACUUM;

OXIDATION PROCESS; SACRIFICIAL SILICON OXIDE; WET OXIDATION; X-RAY REFLECTOMETRY;

SILICON CARBIDE;

EID: 8744318670     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1337     Document Type: Conference Paper

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