The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes

Journal of Applied Physics

Volumn 84, Issue 4, 1998, Pages 2099-2104

  Yu, L S ^a   Liu, Q Z ^a   Xing, Q J ^a   Qiao, D J ^a   Lau, S S ^a   Redwing, J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Epitronics/ATMI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001049050     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368270     Document Type: Article

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