Barrier Inhomogeneities and Electrical Characteristics of Ti/4H-SiC Schottky Rectifiers

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 449-455

  Defives, Dominique ^a   Noblanc, Olivier ^b   Dua, C ^a   Brylinski, Christian ^b   Barthula, Marc ^a   Aubry Fortuna, V ^b   Meyer, Françoise ^a  

^a THALES   (France)

^b CNRS   (France)

Author keywords

Barrier inhomogeneities; Schottky barrier rectifiers; Silicon carbide

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; THERMAL EFFECTS; TITANIUM; VOLTAGE MEASUREMENT;

SCHOTTKY BARRIER RECTIFIERS;

SOLID STATE RECTIFIERS;

EID: 0033101204     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748861     Document Type: Article

References (19)

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