Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 297-303

  Miura, Naruhisa ^a   Oishi, Toshiyuki ^a   Nanjo, Takuma ^a   Suita, Muneyoshi ^a   Abe, Yuji ^a   Ozeki, Tatsuo ^a   Ishikawa, Hiroyasu ^b   Egawa, Takashi ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Leakage currents; MODFETs; Rapid thermal annealing (RTA); Schottky barriers; Schottky diodes

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITANCE MEASUREMENT; ELECTRODES; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

GATE ELECTRODES; MODFET; SURFACE TRAPS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1642319483     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822472     Document Type: Article

References (29)

1. L. Shen, R. Coffie, S. Heikman, D. Buttari, A. Chini, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "Polarization-engineered GaN/AlGaN-GaN HEMTs with record high power without passivation," in Proc. 61st Device Research Conf., Salt Lake City, UT, 2003.
2. V. Kumar, W. Lu, F. A. Khan, R. Schwindt, A. Kuliev, J. Yang, M. A. Khan, and I. Adesida, "High performance 0.15 μm recessed gate AlGaN-GaN HEMTs on sapphire," in IEDM Tech. Dig., 2001.
3. K. Kasahara, H. Miyamoto, Y. Ando, Y. Okamoto, T. Nakayama, and M. Kuzuhara, "Ka-band 2.3 W power AlGaN-GaN heterojunction FET," in IEDM Tech. Dig., 2002.
4. E. Alekseev, S. S. H. Hsu, D. Pavlidis, T. Tsuchiya, and M. Kihara, "Broadband AlGaN-GaN HEMT MMIC attenuators with high dynamic range," in Proc. 30th Eur. Microwave Conf., 2000.
5. S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, G. Simin, X. Hu, and J. Yang, "Effect of gate leakage current on noise properties of AlGaN-GaN field effect transistors," J. Appl. Phys., vol. 88, pp. 6726-6730, 2000.
6. S. A. Vitusevich, S. V. Danylyuk, N. Klein, M. V. Petrychuk, V. N. Sokolov, V. A. Kochelap, A. E. Belyaev, V. Tilak, J. Smart, A. Vertiatchikh, and L. F. Eastman, "Excess low-frequency noise in AlGaN-GaN-based high-electron-mobility transistors," Appl. Phys. Lett., vol. 80, pp. 2126-2128, 2002.
7. W. S. Tan, P. A. Houston, P. J. Parbrook, D. A. Wood, G. Hill, and C. R. Whitehouse, "Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN-GaN heterostructure field-effect transistors," Appl. Phys. Lett., vol. 80, pp. 3207-3209, 2002.
8. S. N. Mohammad, Z. Fan, A. E. Botchkarev, W. Kim, O. Aktas, A. Salvador, and H. Morkoç, "Near-ideal platinum-GaN Schottky diodes," Electron. Lett., vol. 32, p. 598, 1996.
9. 0.69N," Semicond. Sci. Technol., vol. 17, pp. L47-L54, 2002.
10. H. S. Venugopalan, S. E. Mohney, J. M. Delucca, and R. J. Molnar, "Approaches to designing thermally stable Schottky contacts to n-GaN, " Semicond. Sci. Technol., vol. 14, pp. 757-761, 1999.
11. 0.89N Schottky diodes," IEEE Trans. Electron Devices, vol. 48, pp. 573-580, May 2001.
12. G. L. Chen, F. C. Chang, K. C. Shen, J. Ou, W. H. Chen, M. C. Lee, W. K. Chen, J. Jou, and C. N. Huang, "Thermal stability study of Ni/Ta n-GaN Schottky contacts," Appl. Phys. Lett., vol. 80, pp. 595-597, 2002.
13. M. A. Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur, "AlGaN-GaN metal oxide semiconductor heterostructure field effect transistor," IEEE Electron Device Lett., vol. 21, pp. 63-65, Feb. 2000.
14. E. M. Chumbes, J. A. Smart, T. Prunty, and J. R. Shealy, "Microwave performance of AlGaN-GaN metal insulator semiconductor field effect transistors on sapphire substrate," IEEE Trans. Electron Devices, vol. 48, pp. 416-419, May 2001.
15. A. Tarakji, G. Simin, H. Fatima, V. Adivarahan, M. Gaerski, W. Sun, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska, "High-power K-band submicron insulating gate heterostructure field-effect transistors," in Proc. 61st Device Research Conf., Salt Lake City, UT, 2003, p. 67.
16. N. Miura, T. Nanjo, M. Suita, T. Oishi, Y. Abe, T. Ozeki, H. Ishikawa, T. Egawa, and T. Jimbo, "Thermal annealing effects on Ni-Au based Schottky contacts on n-GaN and AlGaN-GaN with insertion of high work function metal," Solid-State Electron., to be published.
17. _, "Improvement of Schottky characteristics by insertion of refractory metal into Ni-Au electrodes on n-(Al)GaN with thermal annealing," in Proc. Technical Program with Abstract Electronic Materials Conf., Salt Lake City, UT, 2003, p. 56.
18. x in Au/Ni/p-Type GaN ohmic contacts annealed in air," J. Electron. Mater., vol. 32, pp. 341-345, 2003.
19. C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, "Effects of oxidation of Ni-Pt and Ni-Pt-Au p-contacts on performance of InGaN-GaN multiple-quantum well light-emitting diodes," in Proc. Technical Program with Abstract Electronic Materials Conf., Salt Lake City, UT, 2003, p. 54.
20. J. Y. Duboz, F. Binet, N. Laurent, E. Rosencher, F. Scholz, V. Harle, O. Briot, B. Gil, and R. L. Aulombard, "Influence of surface defects on the characteristics of GaN Schottky diodes," in Proc. Mater. Res. Soc. Symp., vol. 449, 1996, p. 1085.
21. R. M. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, "Trap states induced frequency dispersion of AlGaN-GaN heterostructure field effect transistors," in Proc. Technical Program with Abstract Electronic Materials Conf., Salt Lake City, UT, 2003, p. 85.
22. E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, E. T. Yu, G. J. Sullivan, and J. M. Redwing, "Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN-GaN heterostructure field-effect transistor," J. Appl. Phys., vol. 87, pp. 8070-8073, 2000.
23. M. E. Lin, Z. Ma, F. Y. Huang, Z. Fan, L. H. Allen, and H. MorkoÇ, "Low resistance ohmic contacts on wide band-gap GaN," Appl. Phys. Lett., vol. 64, pp. 1003-1005, 1994.
24. B. P. Luther, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Wang, "Investigation of the mechanism for ohmic contact formation in Al and Ti/Al contacts to n-type GaN," Appl. Phys. Lett., vol. 70, pp. 57-59, 1997.
25. S. H. Lim, W. Swider, J. Washburn, and Z. Liliental-Weber, "Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN," J. Appl. Phys., vol. 88, pp. 6364-6368, 2000.
26. G. Hanington, Y. M. Hsin, Q. Z. Liu, P. M. Asbeck, S. S. Lau, M. A. Khan, J. W. Yang, and Q. Chen, "P/He ion implant isolation technology for AlGaN-GaN HFETs," Electron. Lett., vol. 34, p. 193, 1998.
27. T. Oishi, N. Miura, M. Suita, T. Nanjo, Y. Abe, T. Ozeki, H. Ishikawa, T. Egawa, and T. Jimbo, "Highly resistive GaN layers formed by ion implantation of Zn along the c axis," J. Appl. Phys., vol. 94, pp. 1662-1666, 2003.
28. M. Suita, T. Oishi, N. Miura, T. Nanjo, Y. Abe, T. Ozeki, H. Ishikawa, T. Egawa, and T. Jimbo, "Evaluation of ohmic contacts on AlGaN-GaN HEMT using molybdenum as barrier metal," in Proc. 63th Autumn Meeting of the Japan Society of Applied Physics Conf., Niigata, Japan, 2002, p. 1228.
29. Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, and T. Mizutani, "Study on off-state breakdown in AlGaN-GaN HEMTs," in Proc. 5th Int. Conf. Nitride Semiconductors, Nara, Japan, 2003, pp. 375-375.