Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 7, 2006, Pages 1517-1523

  Marso, Michel ^a   Heidelberger, Gero ^a   Indlekofer, Klaus Michael ^a   Bernát, Juraj ^a   Fox, Alfred ^a   Kordos P ^b   Lüth, Hans ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

Dielectric films; Gallium nitride; Metal insulator semiconductor (MIS) devices; Mobility; Modulation doped field effect transistors (MODFETs)

Indexed keywords

DIELECTRIC FILMS; GALLIUM NITRIDE; GATES (TRANSISTOR); MIS DEVICES; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; SILICON CARBIDE;

COULOMB SCATTERING; GATE INSULATION; MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFETS); SILICON-DIOXIDE LAYER;

MOSFET DEVICES;

EID: 33745700918     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.875819     Document Type: Article

References (36)

1. T of over 120 GHz," IEEE Electron Device Lett., vol. 23, no. 8, pp. 455-457, Aug. 2002.
2. J. M. Barker, D. K. Ferry, D. D. Koleske, and R. J. Shut, "Bulk GaN and AlGaN/GaN heterostructure drift velocity measurements and comparison to theoretical models," J. Appl. Phys., vol. 97, no. 6, pp. 63705-1-63705-5, Mar. 2005.
3. B. M. Green, K. K. Chu, E. M. Chumbes, and J. A. Smart, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/ GaN HEMTs," IEEE Electron Device Lett., vol. 21, no. 6, pp. 268-270, Jun. 2000.
4. 4, and silicon oxynitride," Appl. Phys. Lett., vol. 84, no. 4, pp. 613-615, Jan. 2004.
5. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.
6. W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, "A comparative study of surface passivation on AlGaN/GaN HEMTs," Solid State Electron., vol. 46, no. 9, pp. 1441-1444, Sep. 2002.
7. I. Harrison, N. W. Clayton, and N. J. Jeffs, "High temperature RF characterisation of SiN passivated and unpassivated AlGaN/GaN HFETs," Phys. Status Solidi, A, vol. 188, no. 1, pp. 275-278, Nov. 2001.
8. D. Gregusova, J. Bernát, M. Drzik, M. Marso, J. Novak, and P. Kordoš, "Influence of passivation-induced stress on the performance of AlGaN/GaN HEMTs," Phys. Stat. Sol. C, vol. 2, no. 7, pp. 2619-2622, May 2005.
9. M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, and M. S. Shur, "AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates," Appl. Phys. Lett., vol. 77, no. 9, pp. 1339-1341, Aug. 2000.
10. M. A. Khan, G. Simin, J. Yang, J. Zhang, A. Koudymov, M. S. Shur, R. Gaska, X. Hu, and A. Tarakji, "Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications," IEEE Trans. Microw. Theory Tech., vol. 51, no. 2, pp. 624-633, Feb.2003.
11. 3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers," Jpn. J. Appl. Phys., vol. 43, no. 6B, pp. L777-L779, 2004.
12. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films," Appl. Phys. Lett., vol. 86, no. 3, pp. 032109-1-032109-3, Jan. 2005.
13. 4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors," IEEE Electron Device Lett., vol. 24, no. 9, pp. 541-543, Sep. 2003.
14. T of 40/24 GHz," Electron. Lett., vol. 41, no. 11, pp. 667-668, May 2005.
15. J. Bernát, M. Wolter, A. Fox, M. Marso, J. Flynn, G. Brandes, and P. Kordoš, "Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs," Electron. Lett., vol. 40, no. 1, pp. 78-80, Jan. 2004.
16. 2/AlGaN/GaN metal-oxide-senticonductor heterostructure field-effect transistors," Appl. Phys. Lett., vol. 87, no. 14, pp. 143501-1-143501-3, Oct. 2005.
17. J. Bernat, P. Javorka, M. Marso, and P. Kordoš, "Conductivity and hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation," Appl. Phys. Lett., vol. 83, no. 26, pp. 5455-5457, Dec. 2003.
18. J. R. Shealy, T. R. Prunty, E. M. Chumbes, and B. K. Ridley, "Growth and passivation of AlGaN/GaN heterostructures," J. Cryst. Growth, vol. 250, no. 1/2, pp. 7-13, Mar. 2003.
19. 0.75N/GaN modulation-doped field-effect transistors," J. Appl. Phys., vol. 87, no. 8, pp. 3900-3904, Apr. 2000.
20. M. Higashiwaki, N. Hirose, and T. Matsui, "Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier layers," IEEE Electron Device Lett., vol. 26, no. 3, pp. 139-141, Mar. 2005.
21. S.M. Sze, High Speed Semiconductor Devices. New York: Wiley, 1990, p. 302.
22. 4 passivation on AlGaN/GaN/Si HEMT performance," Electron. Lett., vol. 39, no. 15, pp. 1155-1157, Jul. 2003.
23. M. Marso, J. Bernát, P. Javorka, and P. Kordoť, "Influence of a carrier supply layer on carrier density and drift mobility of AlGaN/GaN/SiC high-electron-mobility transistors," Appl. Phys. Lett., vol. 84, no. 15, pp. 2928-2930, Apr. 2004.
24. D. C. Look, Electrical Characterization of GaAs Materials and Devices. Chichester, U.K.: Wiley, 1989, p. 162.
25. M. Marso, J. Bernát, P. Javorka, A. Fox, and P. Kordoš, "Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors," Phys. Stat. Sol. C, vol. 2, no. 7, pp. 2611-2614, May 2005.
26. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, "Parasitic MESFET in (Al, Ga)As/GaAs modulation doped FETs and MODFET characterization," IEEE Trans. Electron Devices, vol. ED-31, no. 1, pp. 29-35, Jan. 1984.
27. M. E. Levinshtein, P. A. Ivanov, M. A. Khan, G. Simm, J. Zhang, X. Hu, and J. Yang, "Mobility enhancement in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors," Semicond. Sci. Technol., vol. 18, no. 7, pp. 666-669, Jul. 2003.
28. H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors," J. Vac. Sci. Technol. A Microelectron. Process. Phenom., vol. 21, no. 4, pp. 1844-1855, Jul. 2003.
29. F. Gámiz, J. B. Roldán, J. E. Carceller, and P. Cartujo, "Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors," Appl. Phys. Lett., vol. 82, no. 19, pp. 3251-3253, May 2003.
30. G. Y. Chung, J. R. Williams, C. C. Tin, K. McDonald, D. Farmer, R. K. Chanana, S. T. Pantelides, O. W. Holland, and L. C. Feldman, "Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation," Appl. Surf. Sci., vol. 184, no. 1-4, pp. 399-403, Dec. 2001.
31. M. Ono, T. Ishihara, and A. Nishiyama, "Influence of dielectric constant distribution in gate dielectrics on the degradation of electron mobility by remote Coulomb scattering in inversion layers," IEEE Trans. Electron Devices, vol. 51, no. 5, pp. 736-740, May 2004.
32. K. Küpfmüller, Einführung in die theoretische Elektrotechnik. Berlin, Germany: Springer-Verlag, 1973, p. 81.
33. K. K. Thornber, "Relation of drift velocity to low-field mobility and highfield saturation velocity," J. Appl. Phys., vol. 51, no. 4, pp. 2127-2136, Apr. 1980.
34. N. Moll, M. R. Hueschen, and A. Fischer-Colbrie, "Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs," IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 879-886, Jul. 1988.
35. M. Akita, S. Kishimoto, K. Maezawa, and T. Mizutani, "Evaluation of effective electron velocity in AlGaN/GaN HEMTs," Electron. Lett., vol. 36, no. 20, pp. 1736-1737, Sep. 2000.
36. M. Akita, S. Kishimoto, and T. Mizutani, "High-frequency measurements of AlGaN/GaN HEMTs at high temperatures," IEEE Electron Device Lett., vol. 22, no. 8, pp. 376-377, Aug. 2001.