Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 63, Issue 19, 1993, Pages 2676-2678

  Hacke, P ^a   Detchprohm, T ^a   Hiramatsu, K ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

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Indexed keywords

EID: 21544480777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.110417     Document Type: Article

References (10)