Status and prospects for SiC power MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 658-664

  Cooper Jr , James A ^a,b   Melloch, Michael R ^a,b   Singh, Ranbir ^c   Agarwal, Anant ^a,c   Palmour, John W ^a,c  

^a IEEE   (United States)

^b PURDUE UNIVERSITY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Metal oxide semiconductor field effect transistors (MOSFETs); Power devices; Silicon carbide

Indexed keywords

POWER DEVICES;

ELECTRON MOBILITY; ETCHING; LATTICE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

MOSFET DEVICES;

EID: 0036539101     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992876     Document Type: Article

References (40)

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