Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2

Plasma Sources Science and Technology

Volumn 18, Issue 4, 2009, Pages

  Fukumoto, Hiroshi ^a   Fujikake, Isao ^a   Takao, Yoshinori ^a   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHAMBER WALLS; CHARGED SPECIES; COIL CONFIGURATIONS; CONTINUITY EQUATIONS; DIELECTRIC WINDOWS; ENERGY BALANCE EQUATIONS; ETCH PRODUCTS; FLUORINE ATOMS; FLUOROCARBON RADICALS; GAS PRESSURES; GAS-PHASE REACTIONS; GASPHASE; INDUCTIVELY-COUPLED; ION BOMBARDMENT ENERGY; LANGMUIR ADSORPTION; MASS FLOW RATE; MAXWELL'S EQUATIONS; NUMERICAL RESULTS; PLASMA ELECTRON DENSITY; PLASMA FLUIDS; PRODUCT DENSITY; REACTION PRODUCTS; REACTIVE ION; REACTOR CHAMBER; SUBSTRATE SURFACE; SURFACE REACTION MODELS; TWO DIMENSIONAL FLUID MODEL;

ADSORPTION; ELECTROMAGNETISM; FLUORINE; INERTIAL CONFINEMENT FUSION; ION BOMBARDMENT; IONS; MAXWELL EQUATIONS; ORGANIC POLYMERS; PHASE INTERFACES; PLASMA ETCHING; PLASMA FLOW; PLASMAS; REACTION KINETICS; SILICON COMPOUNDS; SUBSTRATES; SURFACE CHEMISTRY; TWO DIMENSIONAL;

SURFACE REACTIONS;

EID: 70350655949     PISSN: 09630252     EISSN: 13616595     Source Type: Journal    
DOI: 10.1088/0963-0252/18/4/045027     Document Type: Article

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