Plasma atomic layer etching using conventional plasma equipment

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 1, 2009, Pages 37-50

  Agarwal, Ankur ^a,b   Kushner, Mark J ^c  

^a APPLIED MATERIALS INC   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC PHYSICS; ATOMS; ETCHING; GAS MIXTURES; INDUCTIVELY COUPLED PLASMA; MICROELECTRONICS; PASSIVATION; PLASMA ETCHING;

ATOMIC LAYER ETCHINGS; ATOMIC LAYERS; CAPACITIVELY COUPLED PLASMAS; COMPUTATIONAL INVESTIGATIONS; CONVENTIONAL PLASMAS; FEATURE SIZES; HIGH COSTS; ION ENERGIES; MICROELECTRONICS FABRICATIONS; NONSINUSOIDAL WAVEFORMS; PLASMA ETCHING PROCESSES; PROCESSING SPEEDS; SINGLE LAYERS; SPECIALIZED EQUIPMENTS; SUBSTRATE MATERIALS;

PLASMAS;

EID: 58149492962     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021361     Document Type: Article

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