Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. II. Coupling reactor and feature scale models

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1919-1925

  Hsu, Cheng Che ^a,b   Hoang, John ^a,c   Le, Vu ^a   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c MATECH Advanced Materials   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH DEPTHS; ETCH PRODUCTS; FEATURE PROFILE EVOLUTIONS; FLOW REGIMES; FLUID MODELS; HYBRID MODELS; RADIAL IONS; RADIAL PROFILES; REACTOR DESIGNS; SCALE MODELS; SHALLOW TRENCH ISOLATIONS; SIDEWALL ANGLES; SPATIAL DISTRIBUTION OF;

CHLORINE; DESIGN OF EXPERIMENTS; INDUCTIVELY COUPLED PLASMA; PLASMAS; SEMICONDUCTING SILICON; SILICON; SIZE DISTRIBUTION;

COUPLED CIRCUITS;

EID: 57249086402     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2998759     Document Type: Article

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