Simulation based plasma reactor design for improved ion bombardment uniformity

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 841-847

  Kim, Heon Chang ^a   Manousiouthakis, Vasilios I ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL GEOMETRY; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRONS; ION BOMBARDMENT; IONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

BOLTZMANN EQUATIONS; CONTINUUM FLUID EQUATIONS;

PLASMA DEVICES;

EID: 0034155426     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591284     Document Type: Article

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