Etching characteristics and mechanism of Pb(Zr,Ti)O3 thin films in CF4/Ar inductively coupled plasma

Vacuum

Volumn 75, Issue 4, 2004, Pages 321-329

  Efremov, A M ^a   Kim, D P ^a   Kim, K T ^a   Kim, C I ^a  

^a Chung Ang University   (South Korea)

Author keywords

Dissociation; Electron temperature; Etch rate; Ion assisted etching; PZT

Indexed keywords

DISSOCIATION; ELECTRONS; ETCHING; FERROELECTRIC MATERIALS; INDUCTIVELY COUPLED PLASMA; THERMAL EFFECTS; THIN FILMS;

ELECTRON TEMPERATURE; ION-ASSISTED ETCHING; SURFACE KINETICS;

LEAD COMPOUNDS;

EID: 3142665406     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.03.013     Document Type: Article

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