Etching mechanism of MgO thin films in inductively coupled Cl 2/Ar plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 5, 2004, Pages 2101-2106

  Efremov, A M ^a   Koo, Seong Mo ^a   Kim, Dong Pyo ^a   Kim, Kyoung Tae ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARRIER CONCENTRATION; CHLORINE COMPOUNDS; COOLING; ELECTRONS; ETCHING; MAGNESIA; MIXING; PLASMAS;

CHEMICAL PATHWAYS; ELECTRON TEMPERATURE; ION-ASSISTED CHEMICAL REACTIONS; NONMONOTONIC ETC RATE;

THIN FILMS;

EID: 8344272780     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1772370     Document Type: Article

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